Chemical Vapor Deposition System
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CVD Machine
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Chemical Vapor Deposition System
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Chemical vapor deposition (CVD) allows a thin film to be grown on a substrate through molecules and molecular fragments adsorbing and reacting on a surface. This example illustrates the modeling of such a CVD reactor where triethyl-gallium first decomposes, and the reaction products along with arsine (AsH3) adsorb and react on a substrate to form GaAs layers.The CVD system is modeled using momentum, energy, and mass balances including a detailed description of the gas phase and adsorption kinetics. A reduced reaction scheme is compared to the full scheme in the Reaction Engineering interface.
Chemical Vapor Deposition System
1,200,000 Per unit
1 unit (MOQ)
CVD System
175,000 Per Piece
Chemical Vapour Deposition Systems
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QrystalTM is a research grade chemical vapour deposition system, with 12 independent temperature zones, each capable of reaching temperatures upto 1150 °C. It has an inbuilt precision mass flow controller allowing controlled injection of upto 4 gases. A back pressure regulator allows a fixed controlled pressure to be maintained throughout the deposition chamber. Furnace : QBAKE-1100-3 Independent Heating Zones : 12 Maximum Temperature : 1150 °C for transient, 1100 °C for continuous operation Uniform Temperature Zone Length : 200 mm Temperature Uniformity : Better than ±5 °C within a zone Heater Wire Material : Kanthal Process Tube Material : Quartz Process Tube Diameter : ID = 45 mm, OD = 48 mm Embedded Temperature Sensor : K-type Thermocouple Temperature Controller : TCON-12 Sensor Channels : 16 Sensor Type : K-type Thermocouple (or PT100) Independent Control Loops : 12 Control Algorithm : Floating Point P-I-D Temperature Stability : Better than 0.1 °C PID Auto-tune : Yes Heater Drive : 220V, 50 Hz Vacuum System : VAC-10E-2 Pump Type : 2-stage, Rotary Pump Pump Throughput : 15 m3/hour Ultimate Vacuum : 10m-3 mBar Vacuum Sensor : Pirani Gauge and ±15 psi tube pressure sensor mounted at the end of the quartz tube Chamber Isolation : Butterfly Valve Mass Flow Controller : MF02 Number of Channels : 4 Channel 1, 2 : 0-1000 sccm Auxilliary Valves : 2/channel, one in series for true shutoff, one in parallel for flushing Flow Stability : Better than 0.1% of full scale
Metal Chemical Vapor Deposition system
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Valence Process Equipment offers both production and research-sized MOCVD reactor systems for Group III-Nitride and InGaAl-AsP material systems. We can provide a high degree of customization to suit your specific process requirements. Valence Process Equipment patented, 500-series platform features a non clogging, temperature-controlled showerhead gas injector, and our high symmetry, minimized-volume, non-recirculating pro led reactor, enabling production-level capacities with pilot-level gas and MO usage. Along with high speed wafer carrier rotation, rapid heating capability to 1200C, and high-velocity, uniform- fluid gaps providing efficient heat removal and uniform wall temperatures, the 500-series provides state-of-the-art epitaxial materials properties and uniformities at unbeatable efficiencies. CAPACITY SPECIFICATIONS: – 250- series capacity – 10x2in, 5x3in, 3x4in, 1x6in, 1x8in – 500-series capacity – 72x2in, 20x4in, 7x6in, 4x8in FACILITY SERVICES: – 208 and 380 VAC, 3- Phase Power – Purified N2, H2, and NH3 Gases – Cooling Water Recirculation Loop – Cabinet and Exhaust Ventilation MATERIAL SPECIFICATIONS: – GaN, InGAN, AIGaN, AIN – 2 in., 3 in., 6 in., 8 in. Substrates – Sapphire, Silicon, Silicon Carbide.
Chemical Vapor Deposition System
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Chemical Vapor Deposition System
4,000,000 Per Piece
Thermal Cvd System
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We are offering all types of thermal cvd that are available from us at very nominal rates.
Chemical Vapor Deposition System
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Chemical Vapor Deposition System
Plasma Enhanced CVD System
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Plasma Enhanced CVD System, sputtering system, Lens Holder
