This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate voltages. The linear and saturation regions for the device can be identified from these plots.
Features
Highly efficient
High functionality
Low maintenance cost
Durable body structure
Sturdy construction
Heat resistance
Mosfet Transistors Offered By Us Include
2SK
MTP
IRF
2SJ
IRFD
Available In The Following Ranges
D2
DIP
Module
TO3
TO5
TO92
TO220
TO247
TOP3
Available In The Following Makes
IR
Samsung
ST
Siliconix
Harris
Motorola