Standard Metallization SchemeTi : 200 - 800 Ao , Cr : 200 - 800 Ao
Thin film circuit metallization schemes at HHV are deposited by magnetron sputtering method and the deposited metal layers show excellent adhesion compared to other non vacuum deposition methods.These metallization schemes start with abonding layer of TiW or Cr and a conductive layer of Au Cu on the ceramic substrates.
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