This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).
This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).
Electrically Isolated Metal Case, Upto 400 Amperes Surge Capability, Universal 3-way terminals - 6.3mm Faston, Wide temperature range: - 40o C to 150oC, High frequency MRBs upto 100 KHz.
Electrically Isolated Metal Case, Upto 400 Amperes Surge Capability, Universal 3-way terminals - 6.3mm Faston, Wide temperature range: - 40o C to 150oC, High frequency MRBs upto 100 KHz.
Electrically Isolated Metal Case, Upto 600 Amperes Surge Capabilit, Universal 3-way terminals - 6.3mm Faston, Wide temperature range: - 40o C to 150o C, Zero Recovery, High frequency, Positive or Negative Output.
Electrically Isolated Metal Case, Upto 600 Amperes Surge Capabilit, Universal 3-way terminals - 6.3mm Faston, Wide temperature range: - 40o C to 150o C, Zero Recovery, High frequency, Positive or Negative Output.
These Fast, Ultra Fast Recovery Diodes and Silicon Carbide Schottky Rectifer
Diodes result in much lower cost electronic circuits and equipment as the size of the
EMI filter networks with its bulky capacitors and inductors is substantially
reduced.
The trend today is to replace normal rectifier bridges with Fast, Ultra Fast and
Silicon Carbide Schottky Rectifier Bridges to make more compact and lower cost
equipment. These are now available for both Single and Three Phase AC use.
The metal housing of Modular Rectifier Bridges is preferred over plastic housing
bridges as the cost of heatsink is further reduced or eliminated. Our 25 Amp and
35 Amp Bridges offer up to 5.0 Amp and 8.0 Amp respectively in free air at ambient
temperatures up to 45° C
These Fast, Ultra Fast Recovery Diodes and Silicon Carbide Schottky Rectifer
Diodes result in much lower cost electronic circuits and equipment as the size of the
EMI filter networks with its bulky capacitors and inductors is substantially
reduced.
The trend today is to replace normal rectifier bridges with Fast, Ultra Fast and
Silicon Carbide Schottky Rectifier Bridges to make more compact and lower cost
equipment. These are now available for both Single and Three Phase AC use.
The metal housing of Modular Rectifier Bridges is preferred over plastic housing
bridges as the cost of heatsink is further reduced or eliminated. Our 25 Amp and
35 Amp Bridges offer up to 5.0 Amp and 8.0 Amp respectively in free air at ambient
temperatures up to 45° C
Electrically Isolated Metal Case, Upto 2800 Amperes Surge Capability, Terminals M6 X 12, Wide temperature range: - 40o C to 170C, High frequency Bridges (upto 100 KHz) on request.
Electrically Isolated Metal Case, Upto 2800 Amperes Surge Capability, Terminals M6 X 12, Wide temperature range: - 40o C to 170C, High frequency Bridges (upto 100 KHz) on request.
Compact Modular Rectifier Bridges and Fast Recovery Rectifier Diodes were exported to many countries from 1979 on words. SSE make Standard and Fast Recovery Rectifiers & Bridges are the main stay of the heavy industry in India. Schottky Rectifiers, Fast Recovery, Ultra Fast Recovery and Super Fast Epitaxial Power Rectifiers in DO-4 (DO-203AA), DO-5 (DO-203AB), DO-8, DO-9 and Press Paks were introduced as early as in 1982. In 1988, SSE introduced a whole new line of low, and medium power Rectifier Bridges, Axial Diodes, Axial Schottky Rectifiers, Axial Fast Recovery Rectifiers and Bridges in P6, P3 (DO-203AA) KBPC and Metal Case Packages.
Compact Modular Rectifier Bridges and Fast Recovery Rectifier Diodes were exported to many countries from 1979 on words. SSE make Standard and Fast Recovery Rectifiers & Bridges are the main stay of the heavy industry in India. Schottky Rectifiers, Fast Recovery, Ultra Fast Recovery and Super Fast Epitaxial Power Rectifiers in DO-4 (DO-203AA), DO-5 (DO-203AB), DO-8, DO-9 and Press Paks were introduced as early as in 1982. In 1988, SSE introduced a whole new line of low, and medium power Rectifier Bridges, Axial Diodes, Axial Schottky Rectifiers, Axial Fast Recovery Rectifiers and Bridges in P6, P3 (DO-203AA) KBPC and Metal Case Packages.
Power Semiconductors are quite often used in inverter applications with DC-Link.
High switching frequencies generate harmonics and line distortion. It is important
that electronic circuits in equipments reduce these influences to meet EMI filtering
requirements according to EMIEMC VDE and other international standards.
This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).
Power Semiconductors are quite often used in inverter applications with DC-Link.
High switching frequencies generate harmonics and line distortion. It is important
that electronic circuits in equipments reduce these influences to meet EMI filtering
requirements according to EMIEMC VDE and other international standards.
This noise level can be reduced by up to 10dB when the input rectifier bridges are
configured with Fast Recovery Diodes (Trr = 100 nsec to 200 nsec) as they enable
faster turn off resulting in lower peak recovery currents compared to standard
recovery normal rectifier diodes.
This noise level can be further reduced by approximately another 5dB when using
rectifier bridges with Ultra Fast Recovery Diodes (Trr = 35 nsec) and still further
when configured with Silicon Carbide Schottky Rectifier Diodes (Trr < 10 nsec).