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PN Junction Diode Characteristics Zener diode characteristics Transistor characteristics (CE,CC & CB) FET characteristics UJT characteristics Half and Full wave rectifiers with filters Two stage RC coupled amplifier Transistor amplifier (CE, CC & CB) Two stage FET amplifier Class A,B,C & AB amplifier RC phase shift oscillator Hartely oscilloator Wein bridge oscillator Crystal oscillator Voltage feedback amplifier Current feedback amplifier Collpits oscillator Tuned voltage amplifier Class C tuned power amplifier Class A power amplifier Class B push pull amplifier

The Division has done Pioneering work in the development and manufacture of power semiconductor devices and offer a comprehensive range in various packages. to complement this, a full range of heatsink assemblies using IEC Circuit configuration as well as custom design is available. Hirect Semiconductor device have gained a wide reputation for quality, in industrial, military and transportation application. To keep pace with the development of power electronics, Hirect has extended the range of stud based and capsule devices to include a family of isolated base power modules. These modules conform to international outline with a variety of diode and thyristor combination arrangement offering enhanced thermal and mechanical properties. To serve the sophisticated market, Hirect has invested extensively in the Quality testing systems to ensure international quality & reliability. The test facility is also used in rating and interpretation of device performance.

Code: EEN0012 Semiconductor Diode Characteristics. Semiconductor Diode Characteristics  Experimental training board has been designed specifically for plotting Characteristics of Ge & Si Semiconductor Diodes. The board is absolutely self contained and requires no other apparatus. Practical experience on this board carries great educative value for Science and Engineering Students. Object: To Study and Plot the Forward and Reverse Bias characteristics of (Ge & Si)  Semiconductor Diodes. To Determine the Static and Dynamic resistances of Forward Biased p-n junction of the given Diodes. Features:The board consists of following built-in parts: 0-10V D.C. at 50mA, continuously variable with Coarse & Fine Pots, regulated Power Supply. D.C. Voltmeter, 65mm rectangular dial, with switch selectable ranges of 1V and 10V.  D.C. Microammeter, 65mm rectangular dial, with switch selectable ranges of 50 mA and 10mA.  Ge and Si Semiconductor Diodes.  Adequate no. Of other electronic components.  Mains ON/OFF switch and Fuse